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Plasma etching technology to improve the bonding force of carbon-based film is an efficient and environmentally friendly cleaning technology:
With the rapid development of modern industry, higher requirements are put forward for the performance of metal materials, especially in terms of hardness, high temperature resistance, and wear resistance. By preparing a wear-resistant self-lubricating film on the surface of the material, it can not only effectively improve the wear resistance and service life of the material, reduce the amount of base material used, and save material costs, but also effectively solve the wear resistance and toughness of the base material. The contradiction between.
How to make the film and the substrate bond more firmly, so that the film can achieve very good performance, is a key issue in the research of coating technology. The adhesion of the film mainly depends on the properties of the substrate (material, surface quality and hardness) and the properties of the film (structure, hardness and elastic modulus). If the impurity layers such as cutting fluid residue, anti-rust oil and metal oxide layer on the surface of the material cannot be removed before coating, the bonding force of the film will be greatly affected, which will affect the service life of the film.
Plasma etching technology is an efficient and environmentally friendly cleaning technology that can remove oxides on metal surfaces. The plasma density is high and the energy is strong. The gas ion source can produce a higher plasma density without significant heating effect on the parts. It is an effective pretreatment method for the surface of the temperature-sensitive steel substrate.
Different ion source power and processing time form different microscopic surface roughness of the sample, and the surface roughening strengthens the interface between the film and the substrate, and improves the bonding force between the film and the substrate. Scratch test is widely used in the measurement of film-base binding force. It can simply and quickly judge the strength of film-base binding force.
The gas ion source can generate a higher plasma density, and the surface of the substrate material is cleaned and etched with different ion source power and etching time to obtain different substrate microscopic surface roughness.
Although the gas ion bombardment of different power and time has obtained different surface morphologies of the substrate, the results of Raman spectroscopy show that the D peak and G peak of the sample are around 1350 cm-1 and 1580 cm-1, respectively, which are typical With diamond-like carbon structure, and the Ip/Ic values of the samples are all around 1.5, it can be considered that the content of sp' hybrid bonds in the samples is basically the same.
The film/substrate bonding force of the sample without plasma etching pretreatment is 23 N, and the film/substrate bonding force of the optimized parameter plasma etching pretreatment sample is as high as 69N. The pretreatment of plasma etching has a good effect on the improvement of the bonding force of the film base.
CRF-VPO-4L-S
CRF -APO-IP-XXHD-DXX
CRF-APO-500W-C
CRF-APO-IP-XXHD-RXX
CRF-APO-RP1020-D
CRF-VPO-8L-M
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